silicon carbide power mosfet 1200 v 45 a 90 m j

  • silicon carbide power mosfet 1200 v 45 a 90 m j

  • The company covers an area of 15,000 square meters and the plant construction area is 10,000 square meters. We have introduced more than 50 sets of advanced silicon carbide power mosfet 1200 v 45 a 90 m j production equipment, auxiliary equipment and testing equipment at home and abroad, more than 260 employees, more than 20 middle and senior management staff, more than 10 professional and technical personnel, annual production capacity of 100,000 tons. Main products: flat steel, silicon carbide power mosfet 1200 v 45 a 90 m j steel pipe, steel plate, section steel, steel structure processing parts, etc. We also accept incoming materials and annealing processing.

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SCT30N120H - Silicon carbide Power MOSFET 1200 V, 45 A, 90 silicon carbide power mosfet 1200 v 45 a 90 m j

SCT30N120H - Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package, SCT30N120H, STMicroelectronics Reliability Concerns for Flying SiC Power MOSFETs in Space SiC power MOSFETs have several performance advantages over Si power MOSFETs and silicon IGBTs Current commercial devices are very reliable Demonstrated heavy-ion susceptibility Failure rate estimates indicate a radiation reliability issue for space electronics Any application of commercially available 1200 V SiC MOSFETs in space Related searches silicon carbide power mosfet 1200 v 45 a 90 m j

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NVHL080N120SC1 MOSFET Power, NChannel, Silicon Carbide, TO silicon carbide power mosfet 1200 v 45 a 90 m j

MOSFET Power, NChannel, Silicon Carbide, TO-247-3L 1200 V, 80 m Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, NVH4L080N120SC1 - MOSFET - Power, N-Channel, Silicon Carbide silicon carbide power mosfet 1200 v 45 a 90 m j MOSFET Power, N-Channel, Silicon Carbide, TO-247-4L 1200 V, 80 m NVH4L080N120SC1 Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge silicon carbide power mosfet 1200 v 45 a 90 m j G3R40MT12J 1200 V 40 m SiC MOSFET - genesicsemi silicon carbide power mosfet 1200 v 45 a 90 m j 1200 V 40 m SiC MOSFET TM Electrical Characteristics (At T = 25C Unless Otherwise Stated) Parameter Symbol Conditions Values Unit Note Min. Typ. Max. Drain-Source Breakdown Voltage V V = 0 V, I =100 A 1200 V Zero Gate Voltage Drain Current I V = 1200 V, V = 0 V 1 A Gate Source Leakage Current I V = 0 V, V = 20 V 100 nA

G3R30MT12J 1200 V 30 m SiC MOSFET

1200 V 30 m SiC MOSFET TM Electrical Characteristics (At T = 25C Unless Otherwise Stated) Parameter Symbol Conditions Values Unit Note Min. Typ. Max. Drain-Source Breakdown Voltage V V = 0 V, I =100 A 1200 V Zero Gate Voltage Drain Current I V = 1200 V, V = 0 V 1 A Gate Source Leakage Current I V = 0 V, V = 20 V 100 nA Datasheet - SCT30N120H - Silicon carbide Power MOSFET 1200 V silicon carbide power mosfet 1200 v 45 a 90 m j Silicon carbide Power MOSFET 1200 V, 42 A, 90 m (typ., TJ=150 C), in an HPAK-2 package SCT30N120H Datasheet DS11186 - Rev 3 - October 2020 For further information contact your local STMicroelectronics sales office. www.st silicon carbide power mosfet 1200 v 45 a 90 m j Datasheet - SCT20N120AG - Automotive-grade silicon carbide silicon carbide power mosfet 1200 v 45 a 90 m j Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 m (typ., TJ=150 C), in an HiP247 package SCT20N120AG Datasheet DS12516 - Rev 3 - October 2019 For further information contact your local STMicroelectronics sales office. www.st silicon carbide power mosfet 1200 v 45 a 90 m j

Datasheet - SCT10N120AG - Automotive-grade silicon carbide silicon carbide power mosfet 1200 v 45 a 90 m j

Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 m (typ., TJ = 150 C) in an HiP247 package SCT10N120AG Datasheet DS12509 - Rev 2 - March 2019 For further information contact your local STMicroelectronics sales office. www.st silicon carbide power mosfet 1200 v 45 a 90 m j Cree C2M0025120D SiC MOSFET - SiC and GaN Power and RF Solutions Silicon Carbide Power MOSFET C2M TM silicon carbide power mosfet 1200 v 45 a 90 m j Reverse Recovery Time 45 ns V GS = - 5 V, I SD = 50 A ,T J silicon carbide power mosfet 1200 v 45 a 90 m j 90 120 150 0 200 400 600 800 1000 1200 Cree CPM2-1200-0025B Silicon Carbide MOSFET CPM2-1200-0025B Silicon Carbide Power MOSFET C2M TM silicon carbide power mosfet 1200 v 45 a 90 m j Reverse Recovery Time 45 ns V GS = - 5 V, I SD = 50 A ,T J silicon carbide power mosfet 1200 v 45 a 90 m j GS = 20 V t p < 200 s 0 30 60 90 120 150

Cree C2M0045170D Silicon Carbide MOSFET - SiC and GaN Power silicon carbide power mosfet 1200 v 45 a 90 m j

Silicon Carbide Power MOSFET C2M TM silicon carbide power mosfet 1200 v 45 a 90 m j 90 V 4,5,6 GS = 20 V, I D = 50 A, T J = 150 C g fs Transconductance silicon carbide power mosfet 1200 v 45 a 90 m j V DS = 1200 V T J = 25 C V DS CPM2-1200-0160B I D R Silicon Carbide Power MOSFET silicon carbide power mosfet 1200 v 45 a 90 m j CPM2-1200-0160B 2.39 2.63 V DS 1200 V I D @ & 19 A R DS(on) 160 m Note (1): Assumes a R -& < 0.90 K/W Maximum Ratings (T C &XQOHVVRWKHUZLVHVSHFLHG Symbol Parameter Value Unit Test Conditions Note V DSmax Drain - Source Voltage 1200 V V GS = 0 V, I D $ V GSmax Gate - Source Voltage -10/+25 V Absolute maximum values V 1200 V DS CAB760M12HM3 IDS 1200 V, 760 A All-Silicon silicon carbide power mosfet 1200 v 45 a 90 m j 1200 V, 760 A All-Silicon Carbide silicon carbide power mosfet 1200 v 45 a 90 m j Generation SiC MOSFET Technology silicon carbide power mosfet 1200 v 45 a 90 m j 765 V GS = 15 V, T C = 90 C, T VJ 175 C Note 1 I

V 1200 V DS C3M0075120J D 75 m Silicon Carbide Power MOSFET silicon carbide power mosfet 1200 v 45 a 90 m j

V DS 1200 V I D @ ' 30 A R DS(on) 75 m Maximum Ratings (T C! 'YRPIWWSXLIV[MWIWTIGMIH Symbol Parameter Value Unit Test Conditions Note V DSmax Drain - Source Voltage 1200 V V GS = 0 V, I D! r% V GSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 V GSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 ID Continuous silicon carbide power mosfet 1200 v 45 a 90 m j V 1200 V DS C3M0032120K D 32 m Silicon Carbide Power MOSFET silicon carbide power mosfet 1200 v 45 a 90 m j Power Dissipation 283 W T C! ' 8 J! ' Fig. 20 T J, T stg Operating Junction and Storage Temperature-40 to +175 ' T L Solder Temperature 260 ' 1.6mm (0.063 ) from case for 10s Note (1): When using MOSFET Body Diode V GSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V Drain (Pin 1, TAB) Power Source (Pin 2) Driver Source silicon carbide power mosfet 1200 v 45 a 90 m j Silicon carbide - Wikipedia Silicon carbide (SiC), also known as carborundum / k r b r n d m /, is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite . Synthetic SiC powder has been mass-produced since 1893 for use as an abrasive .

NM400 wear plate is widely used in mining machinery, coal mining machinery, environmental protection machinery, engineering machinery and other product parts. Such as excavator, loader, bulldozer bucket plate, blade, side blade, crusher liner, etc.. NM400 wear plate is also commonly used as high-strength structural steel with yield strength ≥ 800MPa. The main function of NM400 wear plate is to provide protection in places or parts where wear resistance is required, so as to prolong the service life of the equipment.

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